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EnviroTech :: Sustainability Soitec, Silian Sign LED Collaboration3:22 PM MDT | July 9, 2012 | Rebecca Coons Soitec (Paris) and Chongqing Silian Optoelectronics Science & Technology Co., Ltd. (Silian; Chongqing, China) have partnered to jointly develop gallium nitride (GaN) template wafers using hydride vapor phase epitaxy (HVPE). The resulting GaN template wafers present “breakthrough” cost savings in manufacturing light-emitting diodes (LED), the companies say .The agreement aims to validate the manufacturability and enabe the commercialization of GaN template wafers using Silian's sapphire substrates and Soitec's unique HVPE technology. The partner... This information is only available to Chemical Week subscribers. Forgot your user ID or password?
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