R&H and IBM Team Up for 32-nm Technology

Rohm and Haas (R&H) says it will work with IBM to create patterning materials and processes to enable ion implantation at and below the 32-nanometer (nm) scale. The companies will work together on this project at IBM's Yorktown, NY and Albany, NY facilities and at R&H Electronic Materials' Advanced Technology Center at Marlborough, MA. The companies did not disclose financial terms of the deal. Ion implantation has become a critical technology for next-generation chips at and below 32-nm, R&H says. The implantation process is a set of process steps...

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